a p95t10agw-hf advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower on-resistance r ds(on) 6m rohs compliant & halogen-free i d 150a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.45 /w rthj-a maixmum thermal resistance, junction-ambient 40 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 277.8 operating junction temperature range continuous drain current, v gs @ 10v 3 total power dissipation 3.1 gate-source voltage + 20 continuous drain current (chip) 150 120 pulsed drain current 1 480 continuous drain current, v gs @ 10v parameter rating drain-source voltage 100 201209121 1 halogen-free product -55 to 150 95 -55 to 150 g d s g d s to-3p a p95t10a series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-3p package is widely preferred for commercial-industrial surface mount applications and suited for higher voltage applications such as smps.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =60a - - 6 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =60a - 120 - s i dss drain-source leakage current v ds =100v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 170 270 nc q gs gate-source charge v ds =80v - 30 - nc q gd gate-drain ("miller") charge v gs =10v - 78 - nc t d(on) turn-on delay time v ds =50v - 130 - ns t r rise time i d =40a - 250 - ns t d(off) turn-off delay time r g =25 - 360 - ns t f fall time v gs =10v - 270 - ns c iss input capacitance v gs =0v - 9060 14500 pf c oss output capacitance v ds =25v - 830 - pf c rss reverse transfer capacitance f=1.0mhz - 430 - pf r g gate resistance f=1.0mhz - 2.1 4.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0v - 80 - ns q rr reverse recovery charge di/dt=100a/s - 270 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 120a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP95T10AGW-HF
a p95t10agw-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 80 160 240 320 0 4 8 12 16 20 24 28 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v gs =5.0v 0 40 80 120 160 200 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 8.0v 7.0v 6.0v v gs =5.0v 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =60a v g =10v 0 10 20 30 40 50 60 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) i d =1ma i d =1ma
ap95t10agw-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 40 80 120 160 200 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =50v v ds =60v v ds =80v i d =40a q v g 10v q gs q gd q g charge 0 2000 4000 6000 8000 10000 12000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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